Fluorine doped silicon oxide process

Details Fluorine doped silicon oxide process Fluorine doped silicon oxide process

1994-11-28

1996-02-20

Pianalto, Bernard

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

25218215, 2521823, 4272553, 427294, 427574, 427585, 428688, 556467, 556474, 556476, 556487, H05H 124

Patent

active

054927366

ABSTRACT:
The present invention is a process for forming a fluorine-containing silicon oxide film on a substrate by plasma-enhanced chemical vapor deposition using a fluorinated silicon source of the formula: ##STR1## wherein at least one of R.sup.1 -R.sup.6 is fluorine and the remaining R groups are independently H, F, non-fluorinated-, partially fluorinated- or perfluorinated-: alkyl, alkenyl, alkynyl, aryl or benzylic groups, or C.sub.x H.sub.2x when one or more of R.sup.1, R.sup.2 or R.sup.3 is connected to R.sup.4, R.sup.5 or R.sup.6 through a bridging group C.sub.y H.sub.2y ; where x is 1-6, and y is 0-6; where M is Si or C and n is 0-6 and R.sup.7 is independently H, F, C.sub.z H.sub.2z+1 where z is 1-6 or C.sub.r H.sub.s F.sub.t where r is 1-6, s is (2r+1-t); t is 1 to (2r+1) . The present invention is also the film formed by that process and several novel source materials used in the process.

REFERENCES:
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