Fluorine barrier layer between conductor and insulator for degra

Details Fluorine barrier layer between conductor and insulator for degra Fluorine barrier layer between conductor and insulator for degra

1997-09-25

1999-07-27

Niebling, John F.

Semiconductor device manufacturing: process

Gettering of substrate

By implanting or irradiating

438475, 438477, 438963, 438798, 438781, H01L 21322

Patent

active

059306556

ABSTRACT:
Method of improving the resistance of a metal against degradation from exposure to fluorine released from a fluorine-containing material by forming a fluorine-barrier layer between the insulator material and the metal. The invention is especially useful in improving corrosion and poisoning resistance of metallurgy, such as aluminum metallurgy, in semiconductor structures. The invention also covers integrated circuit structures made by this method.

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Japanese Patent Appl. Abstract, JP 07094606 (publ. Apr. 7, 1995), 1995 Derwent Info. Ltd.

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