Fluorinated silsesquioxane polymers and use thereof in...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface

Reexamination Certificate

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C430S326000, C430S270100, C430S271100

Reexamination Certificate

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07550254

ABSTRACT:
Fluorocarbinol- and/or fluoroacid-functionalized silsesquioxane polymers and copolymers are provided. The polymers are substantially transparent to ultraviolet radiation (UV), i.e., radiation of a wavelength less than 365 nm and are also substantially transparent to deep ultraviolet radiation (DUV), i.e., radiation of a wavelength less than 250 nm, including 157 nm, 193 nm and 248 nm radiation, and are thus useful in single and bilayer, positive and negative, lithographic photoresist compositions, providing improved sensitivity and resolution. A process for using the composition to generate resist images on a substrate is also provided, i.e., in the manufacture of integrated circuits or the like.

REFERENCES:
patent: 4189323 (1980-02-01), Buhr
patent: 4442197 (1984-04-01), Crivello et al.
patent: 4491628 (1985-01-01), Ito et al.
patent: 4603101 (1986-07-01), Crivello
patent: 4624912 (1986-11-01), Zweifel et al.
patent: 4855017 (1989-08-01), Douglas
patent: 5338818 (1994-08-01), Brunsvold et al.
patent: 5344742 (1994-09-01), Sinta et al.
patent: 5362663 (1994-11-01), Bronner et al.
patent: 5385804 (1995-01-01), Premlatha et al.
patent: 5399462 (1995-03-01), Sachdev et al.
patent: 5429710 (1995-07-01), Akiba et al.
patent: 5562801 (1996-10-01), Nulty
patent: 5580694 (1996-12-01), Allen et al.
patent: 5618751 (1997-04-01), Golden et al.
patent: 5679495 (1997-10-01), Yamachika et al.
patent: 5744376 (1998-04-01), Chan et al.
patent: 5801094 (1998-09-01), Yew et al.
patent: 5985524 (1999-11-01), Allen et al.
patent: 6087064 (2000-07-01), Lin et al.
patent: 6531260 (2003-03-01), Iwasawa et al.
patent: 6623909 (2003-09-01), Hatakeyama et al.
patent: 2001/0041769 (2001-11-01), Iwasawa et al.
patent: 2002/0012871 (2002-01-01), Hatakeyama et al.
patent: 2002/0081520 (2002-06-01), Sooriyakumaran et al.
patent: 2002/0090572 (2002-07-01), Sooriyakumaran et al.
patent: 2004/0137241 (2004-07-01), Lin et al.
patent: 2004/0265754 (2004-12-01), Barclay et al.
patent: 2005/0089792 (2005-04-01), Huang et al.
patent: 1204547 (1986-05-01), None
patent: 1-293339 (1989-11-01), None
Abe et al. (1995), “Study of ArF Resist Material in Terms of Transparency and Dry Etch Resistance,”Journal of Photopolymer Science and Technology. 8(4):637-642.
Allen et al. (1995), “Resolution and Etch Resistance of a Family of 193 nm Positive Resists,”Journal of Photopolymer Science and Technology8(4):623-636.
Allen et al. (1997), “Deep-UV Resist Technology: The Evolution of Materials and Processes for 250-nm Lithography and Beyond,”Handbook of Microlithography, Micromachining, and Microfabrication, vol. 1: Microlithography, P. Raj-Coudhury, Ed., p. 321-375.
Baney et al. (1995), “Silsesquioxanes,”Chemical Reviews95(5):2409-1430.
U.S. Appl. No. 09/514, 212, filed Feb. 28, 2000, Brock et al.
Crawford et al. (2000), “New Materials for 157 nm Photoresists: Characterization and Properties,”Proceedings of SPIE3999:357-364.
Fujigaya et al. (2000), “Chemically Amplified Positive Resist Based on Silsequioxane for 157 nm, Lithography,”Extended Abstracts, 12thInternational Conference on Photopolymers—Principles, Processes, and Materials, The Legends Resort and Country Club, McAfee, New Jersey, p. P39.
Hatakeyama et al. (1998), “Investigation of Discrimination Enhancement in Polysilsesquioxane Based Positive Resist for ArF Lithography,”Advances in Resist Technology and Processing XV, Proceedings of SPIE3333:62-72.
Ito et al. (1982), “Polymerization of Methyl α-(Trifluoromethyl)acrylate and α-(Trifluoromethyl)acrylonitrile and Copolymerization of These Monomers with Methyl Methacrylate,”Macromolecules15:915-920.
Ito et al. (1987), “Anionic Polymerization of α-(Trifluoromethyl)Acrylate,”Recent Advances in Anionic Polymerization, T.E. Hogen-Esch and J. Smid, Eds., Elsevier Science Publishing Co., Inc., pp. 421-430.
Ito et al. (1997), “Synthesis and Evaluation of Alicyclic Backbone Polymers for 193 nm Lithography,”Micro- and Nanopatterning Polymers, ACS Symposium Series 706, Chapter 16, pp. 208-223.
Onishi et al. (1991), “Acid Catalyzed Resist for KrF Excimer Laser Lithography,”Journal of Photopolymer Science and Technology4(3):337-340.
Kunz et al. (1999), “Outlook for 157-nm Resist Design,”Proceedings of SPIE3678:13-23.
Lin et al. (1998), “Extension of 248 nm Optical Lithography: A Thin Film Imaging Approach,”Advances in Resist Technology and Processing XV, Proceedings of SPIE3333:278-288.
Patterson et al. (2000), “Polymers for 157 nm Photoresist Applications: A Progress Report,”Advances in Resist Technology and Processing XVII, Proceedings of SPIE3999:265-374.
Przybilla et al. (1992), “Hexafluoroacetone in Resist Chemistry: A Versatile New Concept for Materials for Deep UV Lithography,”Advances in Resist Technology and Processing IX, Proceedings of SPIE1672:500-512.
Reichmanis et al. (1991), “Chemical Amplification Mechanisms for Microlithography,”Chemistry of Materials3:394-407.
Schmaljohann et al. (2000), “Design Strategies for 157 nm Single-Layer Photoresists: Lithographic Evaluation of a Poly(α-Trifluoromethyl Vinyl Alcohol) Copolymer,”Advances in Resist Technology and Processing XVII, Proceedings of SPIE3999:330-334.
Wilson et al. (1983), “Poly(Methyl α-Trifluoromethylacrylate) as a Positive Electron Beam Resist,”Polymer Engineering and Science23(18):1000-1003.
Sooriyakumaran et al. (2001), “Silicon-Containing Resists for 157 nm Applications,”SPIE's 26thAnnual International Symposium and Education Program on Microlithography4345-35:266.
Sooriyakumaran et al. (2001), “Silicon-Containing Resists for 157 nm Applications,”Proceedings of SPIE □Advances in Resist Technology and Processing XVIII, 4345(1):319-326.

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