Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making
Reexamination Certificate
2011-07-19
2011-07-19
Chu, John S (Department: 1722)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Radiation sensitive composition or product or process of making
C430S907000, C430S910000, C526S247000, C526S281000
Reexamination Certificate
active
07981589
ABSTRACT:
Fluorinated monomers of formula (1) are useful in producing polymers for the formulation of radiation-sensitive resist compositions. R1is H or monovalent C1-C20hydrocarbon group, R2is H, F, methyl or trifluoromethyl, R3and R4are H or a monovalent C1-C8hydrocarbon group, or R3and R4may form an aliphatic hydrocarbon ring, and A is a divalent C1-C6hydrocarbon group
REFERENCES:
patent: 5714625 (1998-02-01), Hada et al.
patent: 6004724 (1999-12-01), Yamato et al.
patent: 6063953 (2000-05-01), Hada et al.
patent: 6261738 (2001-07-01), Asakura et al.
patent: 6312867 (2001-11-01), Kinsho et al.
patent: 6512020 (2003-01-01), Asakura et al.
patent: 6686123 (2004-02-01), Lee et al.
patent: 6800418 (2004-10-01), Yoon et al.
patent: 6830866 (2004-12-01), Kobayashi et al.
patent: 6916591 (2005-07-01), Ohsawa et al.
patent: 6964840 (2005-11-01), Nishimura et al.
patent: 7094850 (2006-08-01), Miyazawa et al.
patent: 2004/0142279 (2004-07-01), Bok et al.
patent: 2006/0246377 (2006-11-01), Yamato et al.
patent: 2007/0179309 (2007-08-01), Hasegawa et al.
patent: 2007/0231741 (2007-10-01), Nishi et al.
patent: 2009/0202943 (2009-08-01), Ohsawa et al.
patent: 9-95479 (1997-04-01), None
patent: 9-208554 (1997-08-01), None
patent: 9-230588 (1997-09-01), None
patent: 9-301948 (1997-11-01), None
patent: 2906999 (1999-04-01), None
patent: 2000-314956 (2000-11-01), None
patent: 2000-336121 (2000-12-01), None
patent: 2002-72484 (2002-03-01), None
patent: 2003-40840 (2003-02-01), None
patent: 2003-66612 (2003-03-01), None
patent: 2003-192729 (2003-07-01), None
patent: 2006-22319 (2006-01-01), None
patent: WO-2004/074242 (2004-09-01), None
Wallraff et al., “Active Fluororesists for 157nm Lithograohy: IBM's Favorite Platforms”, 2nd International Symposium on 157nm Lithography, (May 14-17, 2001).
Lin., Semiconductor Foundry, Lithography, and Partners, Micropatterning Division, TSMC, Inc. ,Proc. SPIE vol. 4690, xxix.
Owa et al., “Immersion lithography; its potential performance and issues”, Proc. SPIE vol. 5040, p. 724.
Hirayama, “Resist and Cover Material Investigation for Immersion Lithography” 2nd Immersion Workshop, Jul. 11, 2003.
Kanna et al., “Study and Control of the Interfacial Mass Transfer of Resist Components in 193nm Immerison Lithography”, Journal of Photopolymer Science and Technology, vol. 18, No. 5, (2005), pp. 603-613.
Journal of Photopolymer Science and Technology, vol. 8 No. 1; (1995), pp. 43-46.
Arimitsu et al., “Effect of Phenolic Hydroxyl Residues on the Improvement of Acid-Proliferation-Type Photoimaging Materials”, Journal of Photopolymer Science and Technology, vol. 9 No. 1 (1996); pp. 29-30.
Hasegawa Koji
Kinsho Takeshi
Kobayashi Katsuhiro
Nishi Tsunehiro
Watanabe Takeru
Birch & Stewart Kolasch & Birch, LLP
Chu John S
Shin-Etsu Chemical Co. , Ltd.
LandOfFree
Fluorinated monomer, fluorinated polymer, resist composition... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Fluorinated monomer, fluorinated polymer, resist composition..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fluorinated monomer, fluorinated polymer, resist composition... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2670957