Floating trap non-volatile semiconductor memory devices...

Details Floating trap non-volatile semiconductor memory devices... Floating trap non-volatile semiconductor memory devices...

2005-02-22

2005-02-22

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C257S317000, C257S407000

Reexamination Certificate

active

06858906

ABSTRACT:
Floating trap non-volatile memory devices and methods are provided. The memory devices include a semiconductor substrate and an adjacent gate electrode. Between the substrate and the gate electrode may be a tunneling insulating layer having a first dielectric constant, a blocking insulating layer having a second dielectric constant that is greater than the first dielectric constant, and a charge storage layer.

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