Floating gate with unique profile by means of undercutting...

Details Floating gate with unique profile by means of undercutting... Floating gate with unique profile by means of undercutting...

2007-08-07

2007-08-07

Booth, Richard A. (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S266000, C257SE27078

Reexamination Certificate

active

11463625

ABSTRACT:
A split-gate flash memory device has a floating gate with a lateral recess at its bottom sidewall by adding an undercutting step. The split-gate flash memory device has a floating gate with a lateral recess on a substrate, an integrated dielectric layer lining the substrate, the sidewall and the lateral recess of the floating gate; a control gate on the integrated dielectric layer and covering at least part of the floating gate; and a dielectric spacer in the lateral recess between the integrated dielectric layer and the control gate.

REFERENCES:
patent: 6025228 (2000-02-01), Ibok et al.
patent: 6184085 (2001-02-01), Jeong
patent: 6656796 (2003-12-01), Chan et al.
patent: 2001/0016385 (2001-08-01), Chiang et al.

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