Floating-gate structure with dielectric component

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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Details

C438S260000, C438S264000, C438S593000, C257S315000, C257S317000, C257S321000

Reexamination Certificate

active

07485526

ABSTRACT:
Floating-gate memory cells having a floating gate with a conductive portion and a dielectric portion facilitate increased levels of charge trapping sites within the floating gate. The conductive portion includes a continuous component providing bulk conductivity to the floating gate. The dielectric portion is discontinuous within the conductive portion and may include islands of dielectric material and/or one or more contiguous layers of dielectric material having discontinuities.

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T.C. Chang et al.; Quasisuperlattice storage: A concept of multilevel charge storage; Jul. 12, 2004; Applied Physics Letters, vol. 85 No. 2; pp. 248-250.

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