Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-01-10
2006-01-10
Dang, Trung (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S261000, C257S315000
Reexamination Certificate
active
06984563
ABSTRACT:
A semiconductor component having a substantially planar surface on which a film can be deposited and a method for manufacturing the semiconductor component. A layer of dielectric material is formed over a semiconductor substrate and a layer of polysilicon is formed on the layer of dielectric material. The polysilicon layer is patterned to form floating gate structures and expose portions of the layer of dielectric material. Additional dielectric material is formed over the floating gate structures and the exposed portions of the layer of dielectric material. The additional dielectric material is planarized such that it has a surface that is substantially contiguous with and coplanar with the floating gate structures. An oxide-nitride-oxide (ONO) dielectric structure or stack is formed on the surfaces of the floating gate structures and the dielectric material. A layer of polysilicon is formed on the ONO dielectric structure.
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Burki Ibrahim Khan
Higgins, Sr. Kelley Kyle
Dang Trung
Dover Rennie Wm.
Drake Paul
FASL LLC
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