Floating gate non-volatile memory and method thereof

Details Floating gate non-volatile memory and method thereof Floating gate non-volatile memory and method thereof

2005-12-14

2009-11-24

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S588000, C257S316000, C257S319000, C257S320000, C257SE29300, C257SE23145

Reexamination Certificate

active

07622349

ABSTRACT:
A method is provided which includes forming a first gate overlying a major surface of an electronic device substrate and forming a second gate overlying and spaced apart from the first gate. The method further includes forming a charge storage structure horizontally adjacent to, and continuous along, the first gate and the second gate, wherein a major surface of the charge storage structure is substantially vertical to the major surface of the substrate.

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