Floating gate nitridation

Details Floating gate nitridation Floating gate nitridation

2006-02-21

2006-02-21

Weiss, Howard (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S513000

Reexamination Certificate

active

07001810

ABSTRACT:
The floating gate, or the oxide between the floating and control gates, or both are nitrided before the control gate layer is deposited.

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M. Arai et al., “Remote Plasma Nitridation for Flash Tunnel Oxide,” Non-Volatile Semiconductor Memory Workshop 2001, pp. 125-127.

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