Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1999-08-12
2000-11-28
Smith, Matthew
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438197, 438923, 257 52, 257 64, 257288, H01L 21336, H01L 218234, H01L 31072, H01L 2904, H01L 2972
Patent
active
061534706
ABSTRACT:
A method of forming floating gate to improve tunnel oxide reliability for flash memory devices. A substrate having a source, drain, and channel regions is provided. A tunnel oxide layer is formed over the substrate. A floating gate is formed over the tunnel oxide and the channel region, the floating gate being multi-layered and having a second layer sandwiched between a first layer and a third layer. The first layer of the floating gate overlying the tunnel oxide layer includes an undoped or lightly doped material. The second layer is highly-doped. The third layer is in direct contact with a dielectric layer, e.g., an oxide-nitride-oxide stack, and is made of an undoped or lightly doped material. A dielectric material is formed over the floating gate and a control gate is formed over the dielectric material.
REFERENCES:
patent: 4329706 (1982-05-01), Crowder et al.
patent: 4354309 (1982-10-01), Gardiner et al.
patent: 4829024 (1989-05-01), Klein et al.
patent: 5093700 (1992-03-01), Sakata
patent: 5298447 (1994-03-01), Hong
patent: 5350698 (1994-09-01), Huang et al.
patent: 5393687 (1995-02-01), Liang
patent: 5481128 (1996-01-01), Hong
patent: 5597745 (1997-01-01), Byun et al.
patent: 5710454 (1998-01-01), Wu
patent: 5877980 (1999-03-01), Mang et al.
patent: 5977601 (1999-01-01), Yang et al.
Chang Kent K.
He Yue-Song
Huang Jiahua
Advanced Micro Devices , Inc.
Kwok Edward C.
Malsawma Lex H.
Smith Matthew
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