Floating gate and fabricating method thereof

Details Floating gate and fabricating method thereof Floating gate and fabricating method thereof

2005-03-29

2005-03-29

Wilson, Allan R. (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S258000, C438S259000, C438S264000, C438S265000, C438S593000, C438S594000, C438S595000

Reexamination Certificate

active

06872623

ABSTRACT:
A floating gate and fabrication method thereof. A semiconductor substrate is provided, on which an oxide layer, a first conducting layer, and a patterned hard mask layer having an opening are sequentially formed. A spacer is formed on the sidewall of the opening. A second conducting layer is formed on the hard mask layer. The second conducting layer is planarized to expose the surface of the patterned hard mask layer. The surface of the second conducting layer is oxidized to form an oxide layer. The patterned hard mask layer and the oxide layer and the first conducting layer underlying the patterned hard mask layer are removed.

REFERENCES:
patent: 6093945 (2000-07-01), Yang
patent: 6504207 (2003-01-01), Chen et al.
patent: 6562673 (2003-05-01), Lin
patent: 6589842 (2003-07-01), Huang
patent: 6660588 (2003-12-01), Yang et al.
patent: 20020072184 (2002-06-01), Higuchi
patent: 20030162347 (2003-08-01), Wang

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