Floating body memory and method of fabricating the same

Details Floating body memory and method of fabricating the same Floating body memory and method of fabricating the same

2007-09-11

2010-06-22

Dickey, Thomas L (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21422, C257SE29300, C438S257000

Reexamination Certificate

active

07741673

ABSTRACT:
A floating body memory includes a semiconductor substrate having a cell region and a peripheral circuit region. A floating body cell is located in the cell region and a first floating body is located in the peripheral circuit region of the semiconductor substrate. A peripheral gate pattern is positioned on the first floating body. First source and drain regions are positioned at both sides of the peripheral gate pattern. First leakage shielding patterns are positioned between the first floating body and the first source and drain regions, the first source and drain regions contacting the first floating body. The first leakage shielding patterns may be positioned outside outer edges of the peripheral gate pattern.

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