Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2011-06-07
2011-06-07
Ha, Nathan W (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257SE23012
Reexamination Certificate
active
07956452
ABSTRACT:
Flip chip packages and methods of manufacturing the same are provided, the flip chip packages may include a package substrate, a semiconductor chip, conductive bumps, a ground pattern and an underfilling layer. The semiconductor chip may be over the package substrate. The conductive bumps may be between the semiconductor chip and the package substrate to electrically connect the semiconductor chip and the package substrate with each other. The ground pattern may ground one of the package substrate and the semiconductor chip. The underfilling layer may be between the package substrate and the semiconductor chip to surround the conductive bumps. The underfilling layer may have a diode selectively located between the ground pattern and the conductive bumps by electrostatic electricity applied to the underfilling layer to protect the semiconductor chip from the electrostatic electricity.
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Choi Kyoung-Sei
Choi Yun-seok
Lee Hee-Seok
Ha Nathan W
Harness & Dickey & Pierce P.L.C.
Samsung Electronics Co,. Ltd.
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