Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Flip chip
Reexamination Certificate
2007-12-21
2009-12-29
Dang, Phuc T (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Flip chip
C257S777000, C257S779000, C438S107000, C438S108000
Reexamination Certificate
active
07638882
ABSTRACT:
A flip-chip package is disclosed. The flip-chip package includes a substrate comprising at least one build-up layer. At least one longitudinal trench is formed in at least one build-up layer of the substrate. The at least one longitudinal trench filled with a conductive material. A conductive plane may be disposed at least partially on the at least one longitudinal trench. An insulating layer may cover the conductive plane and, at least in part, at least one build-up layer of the substrate. The solder resist layer may include a plurality of openings partially exposing the conductive plane. A plurality of conductive pads may be disposed on the conductive plane through the plurality of openings. A method for fabricating the flip-chip package is also disclosed.
REFERENCES:
patent: 2004/0126547 (2004-07-01), Coomer
patent: 2006/0138591 (2006-06-01), Amey et al.
patent: 2006/0170101 (2006-08-01), Kaizuka
patent: 2008/0000674 (2008-01-01), Dory et al.
Dang Phuc T
Grossman Tucker Perreault & Pfleger PLLC
Intel Corporation
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