Flexible metal-oxide-metal capacitor design

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S306000, C257S532000, C257SE27048, C438S399000

Reexamination Certificate

active

07485912

ABSTRACT:
A flexible scheme for forming a multi-layer capacitor structure is provided. The multi-layer capacitor structure includes a first electrode and a second electrode extending through at least one metallization layer, wherein the first electrode and the second electrode are separated by dielectric materials. In each of the metallization layers, the first electrode comprises a first bus and first fingers connected to the first bus, wherein the first bus comprises a first leg in a first direction, and wherein the first fingers are parallel to each other and are in a second direction. The first direction and the second direction form an acute angle. In each of the metallization layers, the second electrode comprises a second bus and second fingers connected to the second bus, wherein the second fingers are parallel to the first fingers in a same metallization layer.

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