Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-03-28
2009-02-03
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S306000, C257S532000, C257SE27048, C438S399000
Reexamination Certificate
active
07485912
ABSTRACT:
A flexible scheme for forming a multi-layer capacitor structure is provided. The multi-layer capacitor structure includes a first electrode and a second electrode extending through at least one metallization layer, wherein the first electrode and the second electrode are separated by dielectric materials. In each of the metallization layers, the first electrode comprises a first bus and first fingers connected to the first bus, wherein the first bus comprises a first leg in a first direction, and wherein the first fingers are parallel to each other and are in a second direction. The first direction and the second direction form an acute angle. In each of the metallization layers, the second electrode comprises a second bus and second fingers connected to the second bus, wherein the second fingers are parallel to the first fingers in a same metallization layer.
REFERENCES:
patent: 5208725 (1993-05-01), Akcasu
patent: 6117747 (2000-09-01), Shao et al.
patent: 6222528 (2001-04-01), Gerpheide et al.
patent: 6570210 (2003-05-01), Sowlati et al.
patent: 6656850 (2003-12-01), Molloy et al.
patent: 6680542 (2004-01-01), Gibson et al.
patent: 6913992 (2005-07-01), Schmitt et al.
patent: 7071599 (2006-07-01), Namerikawa et al.
patent: 2006/0094204 (2006-05-01), Isono
patent: 2006/0220080 (2006-10-01), Dubin et al.
patent: 2006/0220251 (2006-10-01), Kloster et al.
patent: 2006/0249776 (2006-11-01), Manning et al.
patent: 09046012 (1997-02-01), None
Lin John
Parker Kenneth
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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