Flat panel displays comprising a thin-film transistor having...

Details Flat panel displays comprising a thin-film transistor having... Flat panel displays comprising a thin-film transistor having...

2011-06-14

2011-06-14

Tran, Long K (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S059000, C257S072000, C257S083000, C257S257000, C257S290000, C257SE27112, C349S042000, C349S046000, C349S139000, C349S147000, C438S030000, C438S048000

Reexamination Certificate

active

07960730

ABSTRACT:
Provided is a method of fabricating a semiconductive oxide thin-film transistor (TFT) substrate. The method includes forming gate wiring on an insulation substrate; and forming a structure in which a semiconductive oxide film pattern and data wiring are stacked on the gate wiring, wherein the semiconductive oxide film pattern is selectively patterned to have channel regions of first thickness and source/drain regions of greater second thickness and where image data is coupled to the source regions by data wiring formed on the source regions. According to a 4-mask embodiment, the data wiring and semiconductive oxide film pattern are defined by a shared etch mask.

REFERENCES:
patent: 5480810 (1996-01-01), Wei et al.
patent: 6081308 (2000-06-01), Jeong et al.
patent: 2006/0108587 (2006-05-01), Lee et al.

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