Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-01-04
2011-01-04
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S510000, C257SE21170, C257SE21320, C257SE21247, C257SE21267, C257SE21329, C257SE21347, C257SE21411
Reexamination Certificate
active
07863115
ABSTRACT:
An embodiment is a method and apparatus to fabricate a flat panel display. A poly-last structure is formed for a display panel using an amorphous silicon or amorphous silicon compatible process. The poly-last structure has a channel silicon precursor. The display panel is formed from the poly-last structure using a polysilicon specific or polysilicon compatible process.
REFERENCES:
patent: 5817550 (1998-10-01), Carey et al.
patent: 6680485 (2004-01-01), Carey et al.
patent: 7476601 (2009-01-01), Chao et al.
Ho Jackson H.
Lu Jeng Ping
Blakley Sokoloff Taylor & Zafman
Nhu David
Palo Alto Research Center Incorporated
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