Static information storage and retrieval – Read/write circuit – Testing
Patent
1990-01-26
1992-08-18
Gossage, Glenn
Static information storage and retrieval
Read/write circuit
Testing
365203, 365218, 3652385, G11C 2900, G11C 1140
Patent
active
051405539
ABSTRACT:
A flash writing circuit for testing of dynamic random access memory (DRAM) devices comprises a generally conventional DRAM device and includes additional elements for writing identical data in each memory cell via bit lines connected to the memory cells but without the use of the conventional I/O lines normally used to write data into the memory cells.
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Cho Soo-In
Choi Hoon
Gossage Glenn
Samsung Electronics Co,. Ltd.
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