Flash memory with metal-insulator-metal tunneling program...

Details Flash memory with metal-insulator-metal tunneling program... Flash memory with metal-insulator-metal tunneling program...

2004-06-30

2008-10-14

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S267000

Reexamination Certificate

active

07436020

ABSTRACT:
The flash memory cell comprises a sense transistor that has a pair of source/drain lines and a control gate. A coupling metal-insulator-metal capacitor is created between the control gate and a read wordline. A tunneling metal-insulator-metal capacitor is created between the control gate and a write/erase bit line. In one embodiment, the insulator is a metal oxide.

REFERENCES:
patent: 5856688 (1999-01-01), Lee et al.
patent: 5897354 (1999-04-01), Kachelmeier
patent: 6611020 (2003-08-01), Hai
patent: 6674118 (2004-01-01), Yeh
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patent: 6775171 (2004-08-01), Novosel
patent: 6788574 (2004-09-01), Han
patent: 6952032 (2005-10-01), Forbes et al.

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