Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-06-27
2006-06-27
Dinh, Son T. (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185050, C257S321000, C257S324000
Reexamination Certificate
active
07068544
ABSTRACT:
Structures and methods for Flash memory with low tunnel barrier intergate insulators are provided. The non-volatile memory includes a first source/drain region and a second source/drain region separated by a channel region in a substrate. A floating gate opposing the channel region and is separated therefrom by a gate oxide. A control gate opposes the floating gate. The control gate is separated from the floating gate by a low tunnel barrier intergate insulator. The low tunnel barrier intergate insulator includes a metal oxide insulator selected from the group consisting of PbO, Al2O3, Ta2O5, TiO2, ZrO2, and Nb2O5. The floating gate includes a polysilicon floating gate having a metal layer formed thereon in contact with the low tunnel barrier intergate insulator. And, the control gate includes a polysilicon control gate having a metal layer formed thereon in contact with the low tunnel barrier intergate insulator.
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