Flash memory with deep quantum well and high-K dielectric

Details Flash memory with deep quantum well and high-K dielectric Flash memory with deep quantum well and high-K dielectric

2006-05-25

2009-08-25

Smith, Zandra V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S024000, C257S025000

Reexamination Certificate

active

07579646

ABSTRACT:
A flash memory cell includes a substrate and a gate structure formed on the substrate. The gate structure includes a tunneling layer over the substrate, a storage layer over the tunneling layer, a blocking layer over the storage layer, and a gate electrode over the dielectric. The storage layer preferably has a conduction band lower than a conduction band of silicon. The blocking layer is preferably formed of a high-k dielectric material.

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