Flash memory devices having a sloped trench isolation structure

Details Flash memory devices having a sloped trench isolation structure Flash memory devices having a sloped trench isolation structure

2005-08-09

2005-08-09

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S374000

Reexamination Certificate

active

06927447

ABSTRACT:
A method of fabricating a flash memory device. Parallel mask patterns are formed on a substrate. The substrate is etched using the mask patterns to form trenches. An insulating layer pattern is formed in the trenches and an area between the mask patterns. The mask patterns are removed to expose an upper sidewall of the insulating layer pattern that protrudes away from a top surface of the substrate. The insulating layer pattern is isotropically etched to form sloped sidewalls that protrude away from the top surface of the substrate.

REFERENCES:
patent: 6146970 (2000-11-01), Witek et al.

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