Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-11-28
2009-06-30
Purvis, Sue (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S039000, C257S391000, C257SE21682, C257SE27103, C257SE29129
Reexamination Certificate
active
07554149
ABSTRACT:
Flash memory devices include pillar patterns formed between selected pairs of floating gates and control gate extensions that penetrate between selected pairs of floating gates are provided. Methods of fabricating the flash memory devices are also provided.
REFERENCES:
patent: 6380032 (2002-04-01), Lee et al.
patent: 6682977 (2004-01-01), Chang
patent: 2004/0099900 (2004-05-01), Iguchi et al.
patent: 10-2004-70650 (2004-08-01), None
Erdem Fazli
Purvis Sue
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
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