Flash memory devices comprising pillar patterns and methods...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S039000, C257S391000, C257SE21682, C257SE27103, C257SE29129

Reexamination Certificate

active

07554149

ABSTRACT:
Flash memory devices include pillar patterns formed between selected pairs of floating gates and control gate extensions that penetrate between selected pairs of floating gates are provided. Methods of fabricating the flash memory devices are also provided.

REFERENCES:
patent: 6380032 (2002-04-01), Lee et al.
patent: 6682977 (2004-01-01), Chang
patent: 2004/0099900 (2004-05-01), Iguchi et al.
patent: 10-2004-70650 (2004-08-01), None

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