Flash memory devices and methods of fabricating the same

Details Flash memory devices and methods of fabricating the same Flash memory devices and methods of fabricating the same

2007-12-04

2009-06-30

Nguyen, Cuong Q (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S607000, C257S315000, C257SE21179, C257SE29300, C257SE21310, C438S712000, C438S264000, C438S257000, C438S258000

Reexamination Certificate

active

07553721

ABSTRACT:
Flash memory devices and methods for fabricating the same. In one example embodiment, a method of fabricating a flash memory includes various acts. First, a tunnel oxide layer is formed on an active region of a semiconductor substrate. Next, a gate region is formed by sequentially forming a floating gate, a gate insulating layer, and a control gate over the tunnel oxide layer. Then, a sidewall oxide layer is formed on a gate region. Next, a fluorine plasma ion implantation process is performed on the sidewall oxide layer. Then, a nitride layer is deposited on the sidewall oxide layer. Next, an etch process is performed to form spacer insulating layers.

REFERENCES:
patent: 2004/0175955 (2004-09-01), Haselden et al.
patent: 2007/0259491 (2007-11-01), Nakagawa

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