Flash memory devices and methods of fabricating the same

Details Flash memory devices and methods of fabricating the same Flash memory devices and methods of fabricating the same

2008-05-06

2008-05-06

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S429000, C438S360000

Reexamination Certificate

active

07368345

ABSTRACT:
Flash memory devices and methods of fabricating the same are disclosed. A disclosed method comprises doping at least one active region of a substrate, and forming an etching mask layer on the active region. The etching mask layer defines an opening exposing a portion of the active region. The disclosed method further comprises forming an etching groove in the active region. The etching groove separates a source region and a drain region. The disclosed method also comprises growing an epitaxial layer within the etching groove; forming a gate insulating layer on the epitaxial layer; depositing a first polysilicon layer on inner sidewalls of the opening and on the gate insulating layer; forming a dielectric layer on the first polysilicon layer; and depositing a second polysilicon layer on the dielectric layer.

REFERENCES:
patent: 4764480 (1988-08-01), Vora
patent: 5567635 (1996-10-01), Acovic et al.
patent: 6084265 (2000-07-01), Wu
patent: 6583466 (2003-06-01), Lin et al.
patent: 6587396 (2003-07-01), Jang
patent: 7037785 (2006-05-01), Dong et al.
patent: 7154144 (2006-12-01), Kim et al.

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