Flash memory device structure and manufacturing method thereof

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S270000, C438S201000, C438S587000

Reexamination Certificate

active

06913974

ABSTRACT:
A flash memory device structure is provided. The flash memory device consists of a P-type substrate with an opening, a deep N-well region in the P-type substrate, a first gate structure and a second gate structure on the respective sidewalls of the opening, an insulating layer in the space between the first gate structure and the second gate structure, a source region in the P-type substrate at the bottom section of the opening, a drain region in the P-type substrate at the top section of the opening, a P-well region in the deep N-well region such that the junction between the P-well and the deep N-well region is at a level higher than the bottom section of the opening and a P-type pocket doping region in the P-type substrate on the sidewalls of the opening such that the P-type pocket doping region connects the P-well region with the source region.

REFERENCES:
patent: 6570214 (2003-05-01), Wu
patent: 6593187 (2003-07-01), Hsieh
patent: 6649470 (2003-11-01), Gonzalez et al.
patent: 6649475 (2003-11-01), Wen et al.
patent: 6720216 (2004-04-01), Forbes
patent: 6730565 (2004-05-01), Cho et al.
patent: 6764901 (2004-07-01), Noble et al.
patent: 6780785 (2004-08-01), Hsieh
patent: 2001/0029077 (2001-10-01), Noble et al.
patent: 2002/0137286 (2002-09-01), Gonzalez et al.
patent: 2004/0087084 (2004-05-01), Hsieh

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