Flash memory device having a split gate and method of...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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Reexamination Certificate

active

07094646

ABSTRACT:
A flash memory device having a split gate that can prevent an active region and a floating gate electrode from being misaligned, and a method of manufacturing the same, includes sequentially stacking a gate oxide layer and a floating gate conductive layer on a semiconductor substrate, forming an isolation layer in a predetermined region of the semiconductor substrate where the floating gate conductive layer is formed, and defining an active region. Then, a local oxide layer is formed by oxidizing a predetermined part of the floating gate conductive layer on the active region. A floating gate electrode structure is formed by patterning the floating gate conductive layer using the local oxide layer.

REFERENCES:
patent: 6200859 (2001-03-01), Huang et al.
patent: 6451654 (2002-09-01), Lin et al.
patent: 6589842 (2003-07-01), Huang
patent: 11-307655 (1999-11-01), None
patent: 2001-0065186 (2001-07-01), None
patent: 2003-0088826 (2003-11-01), None

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