Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-08-22
2006-08-22
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
Reexamination Certificate
active
07094646
ABSTRACT:
A flash memory device having a split gate that can prevent an active region and a floating gate electrode from being misaligned, and a method of manufacturing the same, includes sequentially stacking a gate oxide layer and a floating gate conductive layer on a semiconductor substrate, forming an isolation layer in a predetermined region of the semiconductor substrate where the floating gate conductive layer is formed, and defining an active region. Then, a local oxide layer is formed by oxidizing a predetermined part of the floating gate conductive layer on the active region. A floating gate electrode structure is formed by patterning the floating gate conductive layer using the local oxide layer.
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patent: 6451654 (2002-09-01), Lin et al.
patent: 6589842 (2003-07-01), Huang
patent: 11-307655 (1999-11-01), None
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patent: 2003-0088826 (2003-11-01), None
Kim Dai-geun
Kim Jin-woo
Kim Joo-chan
Kim Yong-hee
Kwon Chul-soon
Booth Richard A.
Lee & Morse P.C.
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