Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-04-03
2007-04-03
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21010
Reexamination Certificate
active
11213104
ABSTRACT:
A graded composition, high dielectric constant gate insulator is deposited between a substrate and floating gate in a flash memory cell transistor. If the composition of the gate insulator is closer to the high-k material near the substrate, the electron barrier for hot electron injection will be lower. If the gate insulator is closer to the high-k material near the floating gate, the tunnel barrier can be lower at the floating gate.
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Coleman W. David
Leffert Jay & Polglaze P.A.
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