Flash memory device capable of reduced programming time

Details Flash memory device capable of reduced programming time Flash memory device capable of reduced programming time

2005-11-02

2009-12-22

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Read/write circuit

Particular write circuit

C365S189090, C365S185180

Reexamination Certificate

active

07636265

ABSTRACT:
A flash memory device comprising a high voltage generator circuit that is adapted to supply a program voltage having a target voltage to a selected word line is provided. The flash memory device is adapted to terminate the program interval in accordance with when the program voltage has been restored to the target voltage after dropping below the target voltage. A method for operating the flash memory device is also provided.

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German Patent Office, Office Action dated Mar. 18, 2009.

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