Flash memory device capable of erasing flash blocks in SOI...

Details Flash memory device capable of erasing flash blocks in SOI... Flash memory device capable of erasing flash blocks in SOI...

2006-04-26

2009-02-17

Pham, Hoai v (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S211000, C257SE21179

Reexamination Certificate

active

07491597

ABSTRACT:
Provided is a flash memory, and more particularly, to a method and structure for erasing flash blocks based on back-bias. The method comprises the steps of forming a flash block on a silicon on insulator (SOI) substrate and forming a body-electrode on back side of the silicon on insulator (SOI) substrate.

REFERENCES:
patent: 6424011 (2002-07-01), Assaderaghi et al.

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