Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2006-09-14
2009-02-03
Nguyen, VanThu (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S226000, C365S229000
Reexamination Certificate
active
07486573
ABSTRACT:
A flash memory device may include a memory cell array. The memory cell array may include a plurality of memory cells. The flash memory device may also include a voltage generator which generates a plurality of constant voltages. The voltage generator may comprise of a plurality of voltage regulators, wherein each voltage regulator is configured to divide a high voltage generated from a charge pump to generate at least two constant voltages having a constant voltage difference therebetween. The plurality of voltage regulators may have independent voltage dividing paths, wherein each path is configured to generate a separate constant voltage.
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patent: 6704224 (2004-03-01), Natori
patent: 7019730 (2006-03-01), Tsuchiya
patent: 2002-170391 (2002-06-01), None
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Jeon Hong-Soo
Kim Dae-Han
Nguyen Van-Thu
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
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