Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2006-09-15
2009-06-16
Nguyen, VanThu (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S226000, C365S229000
Reexamination Certificate
active
07548466
ABSTRACT:
A flash memory device includes a memory cell array including a plurality of memory cells. The flash memory device also includes a voltage generating circuit which generates a plurality of constant voltages to be applied to the memory cell array, the voltage generating circuit including a plurality of voltage regulators which generate at least two constant voltages, each having a constant voltage difference.
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Kim Dae-Han
Park Sang-Kug
Nguyen Van-Thu
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
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