Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2007-10-09
2007-10-09
Le, Vu A. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S189110
Reexamination Certificate
active
11380749
ABSTRACT:
A memory device includes a nonvolatile memory cell array including a plurality of memory cells with a portion of the memory cells to store fuse data, and a fuse register to store the fuse data from the memory cell array. An operation of the memory device is modified in response to the fuse register.
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Hwang Sang-Won
Youn Dong-Kyu
Le Vu A.
Marger & Johnson & McCollom, P.C.
Samsung Electronics Co,. Ltd.
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