Flash memory device and method of manufacturing the same

Details Flash memory device and method of manufacturing the same Flash memory device and method of manufacturing the same

2007-10-31

2010-12-28

Lee, Calvin (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S318000

Reexamination Certificate

active

07858473

ABSTRACT:
A flash memory device having a spacer of a gate region formed in an oxide-nitride-oxide (ONO) structure and a source/drain region formed using the ONO structure. The outermost oxide in the ONO structure is removed and an interlayer insulating film is formed to ensure sufficient space between the gate regions. Thus, it is possible to prevent a void from being generated in the interlayer insulating film and prevent a word line from being electrically connected to a drain contact for forming a bit line.

REFERENCES:
patent: 5436489 (1995-07-01), Murase
patent: 2002/0192915 (2002-12-01), Wada et al.
patent: 2005/0048754 (2005-03-01), Yeh et al.
patent: 2006/0163678 (2006-07-01), Anezaki
patent: 1591823 (2005-03-01), None

Affiliated with

Also associated with

Rating

Flash memory device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Flash memory device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Flash memory device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4181757