Flash memory device and method of manufacturing the same

Details Flash memory device and method of manufacturing the same Flash memory device and method of manufacturing the same

2006-06-30

2008-12-30

Le, Thao X (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S314000, C257S316000, C257S324000, C257S330000, C438S270000, C438S282000, C438S296000

Reexamination Certificate

active

07470587

ABSTRACT:
A flash memory device includes trenches that are formed at regions on a semiconductor substrate spaced apart from one another at predetermined distances, buried floating gates buried into the trenches, a plurality of isolation structures formed between the buried floating gates, and a dielectric film and a control gate formed on the buried floating gates.

REFERENCES:
patent: 2002/0012745 (2002-01-01), Kanamori
patent: 10-2004-0051302 (2004-06-01), None

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