Flash memory device and method of manufacturing the same

Details Flash memory device and method of manufacturing the same Flash memory device and method of manufacturing the same

2006-12-12

2008-10-21

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S299000, C438S694000, C438S695000, C438S696000, C438S700000, C438S701000

Reexamination Certificate

active

07439143

ABSTRACT:
Disclosed is a flash memory device. The flash memory device includes a plurality of trench lines in an isolation region of a semiconductor device, a common source region along a word line (WL) direction under a surface portion of the semiconductor substrate, a plurality of gate lines along a vertical direction of the trench line, a drain region on an opposite side of the gate line to the common source region, a drain contact over the drain region, and a uniform by-product layer on the common source region.

REFERENCES:
patent: 6812120 (2004-11-01), Young et al.
patent: 7195977 (2007-03-01), Jung et al.
patent: 7235478 (2007-06-01), Geng et al.
patent: 2002/0039843 (2002-04-01), Ikeda et al.
patent: 2002/0132427 (2002-09-01), Rudeck et al.
patent: 2004/0248413 (2004-12-01), Donohoe et al.
patent: 2005/0106888 (2005-05-01), Chiu et al.

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