Flash memory device and method of manufacturing the same

Details Flash memory device and method of manufacturing the same Flash memory device and method of manufacturing the same

2007-07-03

2007-07-03

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21179

Reexamination Certificate

active

11479051

ABSTRACT:
A non-volatile memory device has a gate dielectric film formed between a floating gate and a control gate. The gate dielectric film is formed by forming an oxide film and a ZrO2/Al2O3/ZrO2(ZAZ) film. Accordingly, the reliability of non-volatile memory devices can be improved while securing a high coupling ratio.

REFERENCES:
patent: 2006/0094191 (2006-05-01), Choi et al.
patent: 2007/0026608 (2007-02-01), Choi et al.

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