Flash memory device and method of fabricating the same

Details Flash memory device and method of fabricating the same Flash memory device and method of fabricating the same

2007-12-11

2007-12-11

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S596000, C257SE21680

Reexamination Certificate

active

11158909

ABSTRACT:
A flash memory device includes control gates that are formed to completely surround the top and sides of floating gates. The control gates are located between the floating gates that are adjacent in the word line direction as well as the floating gates that are adjacent in the bit line direction. The present flash memory device reduces a shift in a threshold voltage resulting from interference among floating gates and increases an overlapping area of the floating gate and the control gates. Thus, there is an effect in that the coupling ratio can be increased.

REFERENCES:
patent: 5138573 (1992-08-01), Jeuch
patent: 5208175 (1993-05-01), Choi et al.
patent: 6133601 (2000-10-01), Watanabe
patent: 6432773 (2002-08-01), Gerber et al.
patent: 2002-0052611 (2002-07-01), None
patent: 2005-0038752 (2005-04-01), None

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