Electrical computers and digital processing systems: memory – Storage accessing and control – Specific memory composition
Reexamination Certificate
2011-05-24
2011-05-24
Kim, Matt (Department: 2186)
Electrical computers and digital processing systems: memory
Storage accessing and control
Specific memory composition
C711S200000, C711SE12002
Reexamination Certificate
active
07949819
ABSTRACT:
According to an example embodiment, a method of changing a block size in a flash memory device having a multi-plane scheme may include decoding an external input address and changing the block size of the flash memory device from a first block size to a second block size. The external input address may be decoded into a block address and a page address. The block size of the flash memory device may be changed from the first block size to the second block size by shifting at least one bit of the block address to the page address or shifting at least one bit of the page address to the block address.
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Kang Sang-Chul
Lee Jin-Yub
Chrzanowski Matthew R
Harness & Dickey & Pierce P.L.C.
Kim Matt
Samsung Electronics Co,. Ltd.
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