Flash memory device and method for manufacturing the same

Details Flash memory device and method for manufacturing the same Flash memory device and method for manufacturing the same

2007-08-30

2009-11-17

Thai, Luan C (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S261000, C438S595000, C438S264000, C438S267000, C257SE21179

Reexamination Certificate

active

07618862

ABSTRACT:
A method for manufacturing a flash memory device includes: a) forming a stack gate pattern composed of a tunnel oxide layer, a floating gate, ONO layers, and a control gate on a semiconductor substrate; b) conformably forming a first sidewall oxide layer made of a silicon oxide layer along both sidewalls of the stack gate pattern; c) performing a plasma nitride process for forming a nitride barrier layer in the first sidewall oxide layer; d) forming a sidewall nitride layer on the first sidewall oxide layer; e) conformably forming a second sidewall oxide layer on the sidewall nitride layer; and f) performing an etching process for forming a spacer which includes the first sidewall oxide layer, the nitride barrier layer, the sidewall nitride layer, and the second sidewall oxide layer. The flash memory device prevents data from being lost via the spacer equipped with a nitride barrier layer, resulting in increased reliability of a desired flash memory device.

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