Flash memory device and method for fabricating the same

Details Flash memory device and method for fabricating the same Flash memory device and method for fabricating the same

2006-09-19

2006-09-19

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S954000

Reexamination Certificate

active

07109084

ABSTRACT:
A flash memory device and a method for fabricating the same is disclosed that reduces or prevents mis-operation and improves integration, which includes a semiconductor substrate having a field region and an active region; a device isolation layer on the field region including a conductive (e.g., polysilicon) layer and an insulating layer thereon; a sidewall spacer at sides of the device isolation layer; an ONO layer on the active region; a gate electrode on the ONO layer; source and drain regions at sides of the gate electrode in the active region; a passivation layer on the semiconductor substrate, having a contact hole in the drain region; and a drain electrode in the contact hole, connected with the drain region.

REFERENCES:
patent: 5436481 (1995-07-01), Egawa et al.
patent: 6881619 (2005-04-01), Lee et al.
patent: 7018896 (2006-03-01), Ngo et al.

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