Flash memory device and manufacturing method thereof

Details Flash memory device and manufacturing method thereof Flash memory device and manufacturing method thereof

2007-10-09

2007-10-09

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S264000, C438S266000, C438S594000, C257SE21422

Reexamination Certificate

active

11018536

ABSTRACT:
A method of manufacturing a flash memory device is provided. Multiple stack structures each comprising a tunneling oxide layer and a first conductive layer are formed over a substrate. Thereafter, multiple embedded doping regions is formed in the substrate between the stack structures. A dielectric layer is formed over the substrate to cover the stack structures and then the dielectric layer is etched back and a portion of dielectric layer is remained on the stack structures. Using a portion of the remaining dielectric layer as a mask, a portion of the first conductive layer is removed. An inter-layer dielectric layer and a second conductive layer are sequentially formed over the first conductive layer. Because a self-aligned process is used to define the floating gate and the floating gate has a narrow-top/wide-bottom configuration, the fabrication process is simplified and the coupling ratio of the stack gate is increased.

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