Flash memory device and manufacturing method of the same

Details Flash memory device and manufacturing method of the same Flash memory device and manufacturing method of the same

2011-04-26

2011-04-26

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S400000, C438S238000, C438S239000, C438S386000, C438S389000, C257S324000, C257SE21679, C257SE27103, C257S295000, C257S296000, C257S314000, C257SE21209

Reexamination Certificate

active

07932147

ABSTRACT:
A flash memory device may include a device isolation layer and an active area formed over a semiconductor substrate, a memory gate formed over the active area, and a control gate formed over the semiconductor substrate including the memory gate, wherein the active area, where a source contact is to be formed, has the same interval spacing as a bit line, and a common source line area, where the source contact is to be formed, has an impurity area connecting neighboring active areas.

REFERENCES:
patent: 5940718 (1999-08-01), Ibok et al.
patent: 6174787 (2001-01-01), Fuller et al.
patent: 6243293 (2001-06-01), Van Houdt et al.
patent: 7061040 (2006-06-01), Shih
patent: 7075142 (2006-07-01), Sim et al.
patent: 7452763 (2008-11-01), Yu
patent: 7482653 (2009-01-01), Sandhu et al.
patent: 7544565 (2009-06-01), Kwak et al.
patent: 2003/0100172 (2003-05-01), Kim et al.
patent: 2004/0005764 (2004-01-01), Wu et al.
patent: 2004/0070023 (2004-04-01), Kim et al.
patent: 2005/0074940 (2005-04-01), Jung et al.
patent: 2005/0285177 (2005-12-01), Shone
patent: 2006/0160308 (2006-07-01), Kim
patent: 2007/0267692 (2007-11-01), Joo et al.
patent: 2009/0140378 (2009-06-01), Kim
patent: 2009/0148990 (2009-06-01), Kim
patent: 2009/0236651 (2009-09-01), Kwak et al.
patent: 2009/0294837 (2009-12-01), Lee et al.
patent: 2010/0127324 (2010-05-01), Hsieh

Affiliated with

Also associated with

Rating

Flash memory device and manufacturing method of the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Flash memory device and manufacturing method of the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Flash memory device and manufacturing method of the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2736151