Flash memory device and fabrication process thereof, method...

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S787000

Reexamination Certificate

active

06998354

ABSTRACT:
A fabrication process of a flash memory device includes microwave excitation of high-density plasma in a mixed gas of Kr and an oxidizing gas or a nitriding gas. The resultant atomic state oxygen O* or hydrogen nitride radicals NH* are used for nitridation or oxidation of a polysilicon electrode surface. It is also disclosed the method of forming an oxide film and a nitride film on a polysilicon film according to such a plasma processing.

REFERENCES:
patent: 5068124 (1991-11-01), Batey et al.
patent: 5891809 (1999-04-01), Chau et al.
patent: 5939763 (1999-08-01), Hao et al.
patent: 6040216 (2000-03-01), Sung
patent: 6110842 (2000-08-01), Okuno et al.
patent: 6287988 (2001-09-01), Nagamine et al.
patent: 6380033 (2002-04-01), He et al.
patent: 6399520 (2002-06-01), Kawakami et al.
patent: 6461984 (2002-10-01), Han et al.
patent: 6469333 (2002-10-01), Takai et al.
patent: 6479392 (2002-11-01), Yamazaki et al.
patent: 2001/0044187 (2001-11-01), Joo et al.
patent: 59-105371 (1984-06-01), None
patent: 5-267684 (1993-10-01), None
patent: 8-51164 (1996-02-01), None
patent: 9-205155 (1997-08-01), None
patent: 9-213820 (1997-08-01), None
patent: 9-223752 (1997-08-01), None
patent: PCT/JP01/01967 (2001-03-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Flash memory device and fabrication process thereof, method... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Flash memory device and fabrication process thereof, method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Flash memory device and fabrication process thereof, method... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3711265

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.