Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2006-02-14
2006-02-14
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S787000
Reexamination Certificate
active
06998354
ABSTRACT:
A fabrication process of a flash memory device includes microwave excitation of high-density plasma in a mixed gas of Kr and an oxidizing gas or a nitriding gas. The resultant atomic state oxygen O* or hydrogen nitride radicals NH* are used for nitridation or oxidation of a polysilicon electrode surface. It is also disclosed the method of forming an oxide film and a nitride film on a polysilicon film according to such a plasma processing.
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Ohmi Tadahiro
Sugawa Shigetoshi
Ohmi Tadahiro
Pillsbury Winthrop Shaw & Pittman LLP
Vu David
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