Flash memory device and fabrication method thereof

Details Flash memory device and fabrication method thereof Flash memory device and fabrication method thereof

2011-07-05

2011-07-05

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S287000, C257SE21423, C257SE21680

Reexamination Certificate

active

07972925

ABSTRACT:
The present invention relates to a flash memory device and a fabrication method thereof. A trench may be formed within a junction region between word lines by etching a semiconductor substrate between not only a word line and a select line, but also between adjacent word lines. Accordingly, the occurrence of a program disturbance phenomenon can be prevented as the injection of hot carriers into a program-inhibited cell is minimized in a program operation.

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