Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-12-27
2005-12-27
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S264000
Reexamination Certificate
active
06979619
ABSTRACT:
In a first aspect of the present invention, a method of fabricating a flash memory device is disclosed. The method comprises the steps of providing a portion of a dual gate oxide in a periphery area of the memory device and then simultaneously providing a dual gate oxide in a core area of the memory device and completing the dual gate oxide in the periphery area. Finally, a nitridation process is provided in both the core and periphery areas subsequent to the previous steps. In a second aspect of the present invention, a flash memory device is disclosed. The flash memory device comprises core area having a plurality of memory transistors comprising an oxide layer, a first poly layer, an interpoly dielectric layer, and a second poly layer. The flash memory device further comprises a periphery area having a plurality of transistors comprising an oxide layer, a portion of the first poly layer, and the second poly layer. According to the present invention, the method for fabricating the flash memory device is a simplified process that results in a significant improvement in the oxide reliability in the core and periphery areas and also eliminates the nitrogen contamination problem in the periphery area.
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Chang Kent K.
Chang Mark S.
Fang Hao
He Yue-Song
Advanced Micro Devices , Inc.
Booth Richard A.
Winstead Sechrest & Minick P.C.
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