Flash memory device and a fabrication process thereof,...

Details Flash memory device and a fabrication process thereof,... Flash memory device and a fabrication process thereof,...

2006-09-19

2006-09-19

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S788000, C438S792000

Reexamination Certificate

active

07109083

ABSTRACT:
A fabrication process of a flash memory device includes microwave excitation of high-density plasma in a mixed gas of Kr and an oxidizing gas or a nitriding gas. The resultant atomic state oxygen O* or hydrogen nitride radicals NH* are used for nitridation or oxidation of a polysilicon electrode surface. It is also disclosed the method of forming an oxide film and a nitride film on a polysilicon film according to such a plasma processing.

REFERENCES:
patent: 5068124 (1991-11-01), Batey et al.
patent: 5268320 (1993-12-01), Holler et al.
patent: 5304829 (1994-04-01), Mori et al.
patent: 5891809 (1999-04-01), Chau et al.
patent: 5939763 (1999-08-01), Hao et al.
patent: 6040216 (2000-03-01), Sung
patent: 6110842 (2000-08-01), Okuno et al.
patent: 6287988 (2001-09-01), Nagamine et al.
patent: 6297103 (2001-10-01), Ahn et al.
patent: 6380033 (2002-04-01), He et al.
patent: 6399520 (2002-06-01), Kawakami et al.
patent: 6461984 (2002-10-01), Han et al.
patent: 6469333 (2002-10-01), Takai et al.
patent: 6479392 (2002-11-01), Yamazaki et al.
patent: 2001/0044187 (2001-11-01), Joo et al.
patent: 59-105371 (1984-06-01), None
patent: 5-267684 (1993-10-01), None
patent: 8-51164 (1996-02-01), None
patent: 9-205155 (1997-08-01), None
patent: 9-213820 (1997-08-01), None
patent: 9-223752 (1997-08-01), None
patent: PCT/JP01/01967 (2001-03-01), None
Ito et al., “Silicon Oxynitridation With Inductively Coupled Oxygen—Nitrogen Mixed Plasma,” Jpn. J. Appl. Phys., pp. 612-616, ( 1997).
Hirayama et al., “Low-Temperature Growth of High-Integrity Silicon Oxide Films by Oxygen Radical Generated in High-Density Krypton-Plasma,” IEEE, p. 249-252, ( 1999).
Saito et al., “Low Temperature Formation of Gate-Grade Silicon Nitride Film Employing Microwave-Excitation High-Density Plasma,” Technical Report, IEICE, p. 85-90, ( 1999).

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