Flash memory cell with UV protective layer

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S316000

Reexamination Certificate

active

06989563

ABSTRACT:
A method of protecting a charge trapping dielectric flash memory cell from UV-induced charging, including fabricating a charge trapping dielectric flash memory cell in a semiconductor device; depositing and planarizing an interlevel dielectric layer over the charge trapping dielectric flash memory cell and depositing over the planarized interlevel dielectric layer at least one UV-protective layer, the UV-protective layer including a substantially UV-opaque material.

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