Flash memory cell and methods for fabricating same

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S257000, C438S268000

Reexamination Certificate

active

10803448

ABSTRACT:
A split gate flash memory cell having floating gates with sharp, upwardly flared corners, protective caps of dielectric material which are substantially square or rectangular in cross-section, and elongated and thin Vss dielectric spacers disposed along substantially planar side walls defined by the floating gates and the protective caps.

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patent: 2005/0145920 (2005-07-01), Chang et al.

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