Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-05-08
2007-05-08
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S257000, C438S268000
Reexamination Certificate
active
10803448
ABSTRACT:
A split gate flash memory cell having floating gates with sharp, upwardly flared corners, protective caps of dielectric material which are substantially square or rectangular in cross-section, and elongated and thin Vss dielectric spacers disposed along substantially planar side walls defined by the floating gates and the protective caps.
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Liu Yuan-Hung
Tu Yeur-Luen
Duane Morris LLP
Pham Long
Taiwan Semiconductor Manufacturing Co. Ltd.
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